20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 complementary silicon power transistors ...designed for use in general-purpose amplifier and switching applications features: * power dissipation - pd = 75 w ? tc = 25c * dc current gain hfe = 20 - 100 ? lc = 4.0 a * vce(isrt) = 1-1 v (max.) ? lc = 4.0 a, ib = 400 ma maximum ratings characteristic collector-emitter voltage collector-base voltage emitter-base voltage collector current-continuous base current total, power dissipation @tc=25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo 'c ib pd tj >tsto rating 60 70 5.0 10 6.0 75 0.6 -55 to +150 unit v v v a a w w/c c pnp npn MJE2955T mje3055t 10ampere complementary silicon power transistors 60 volts 75 watts to-220 thermal characteristics characteristic thermal resistance junction to case symbol rejc max 1.67 unit c/w figure -1 power derating 25 50 75 100 tc, temperaturecc) 125 150 i ' ? i hw -44 pin1.base 2.collector s.bmter 4.collector(case) dim a b c d e f g h i j k l m o millimeters min 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.20 0.33 2.48 3.7d max 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.96 1.38 2.97 0.55 2.98 3.90 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
MJE2955T pnp / mje305st npn electrical characteristics ( tc = 25'c unless otherwise noted ) characteristic symbol min max unit off characteristics collector - emitter sustaining voltage (1) ( lc = 200 ma, ib = 0 ) collector cutoff current (vce = 30v,ib = 0) collector cutoff current (vcs = 70v,vm(ofl)=1.5v) ( vce = 70v, vb^ = 1.5 v ,tc <* 150c ) collector cutoff current (vcb = 70v, le = 0) (vcb = 70v,ie = 0itc = 150c) emitter cutoff current (v6b = 5.0v,ic*0 ) vcbxsus) 'ceo 'cex 'cbo iebo 60 0.7 1.0 5.0 1.0 10 5.0 v ma ma ma ma on characteristics (1) dc current gain (ic-^oa.vc^.ov) (le-10a.vc5-4.ov) collector - emitter saturation voltage (ic = 4.0a,ib-0.4a) (ic-10ajb = 3.3a) base - emitter on voltage (lc=4.0a,vce = 4.0v) hfe vce(?t) *be|on) 20 5.0 100 1.1 8.0 1.8 v v dynamic characteristics current gain - bandwidth product (2) ( lc = 500 ma , ^ = 1 0 v ,f = 500 khz ) 't 2.0 mhz (1) pulm tmt puts* width ? 300 us, duty cycle 2.0%
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